IEC 63275-2 Ed. 1.0 b:2022

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This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Product Details

Edition:

1.0

Published:

05/01/2022

ISBN(s):

9782832201213

Number of Pages:

24

File Size:

1 file , 900 KB

Note:

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